Share Email Print

Proceedings Paper

Tunable lateral tunnel coupling between two self-assembled InGaAs quantum dots
Author(s): Gareth J. Beirne; Claus Hermannstädter; Lijuan Wang; Armando Rastelli; Elisabeth Müller; Oliver G. Schmidt; Peter Michler
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We demonstrate direct control over the level of lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. This coupled system, which we also refer to as a lateral quantum dot molecule, was produced using a unique technique which combines molecular beam epitaxy and in-situ atomic layer etching. Atomic force microscopy measurements show that each molecule consists of two structurally distinct dots, which are aligned along the [1-10] direction. Each molecule exhibits a characteristic photoluminescence spectrum primarily consisting of two neutral excitonic and two biexcitonic transitions. The various transitions have been investigated using micro-photoluminescence measurements as a function of excitation power density, time, and applied electric field. Photon statistics experiments between the excitonic emission lines display strong antibunching in the second-order cross-correlation function which confirms that the two dots are quantum coupled. Cascaded emission between corresponding biexcitonic and excitonic emission has also been observed. Using a parallel electric field we can control the quantum coupling between the dots. This control manifests itself as an ability to reversibly switch the relative intensities of the two neutral excitonic transitions. Furthermore, detailed studies of the emission energies of the two neutral excitonic transitions as a function of parallel lateral electric field show a clear anomalous Stark shift which further demonstrates the presence of quantum coupling between the dots. In addition, this shift allows for a reasonable estimate of the coupling energy. Finally, a simple one-dimensional model, which assumes that the coupling is due to electron tunneling, is used to qualitatively describe the observed effects.

Paper Details

Date Published: 8 February 2007
PDF: 13 pages
Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 647104 (8 February 2007); doi: 10.1117/12.697165
Show Author Affiliations
Gareth J. Beirne, Univ. Stuttgart (Germany)
Claus Hermannstädter, Univ. Stuttgart (Germany)
Lijuan Wang, Max-Planck-Institut für Festkörperforschung (Germany)
Armando Rastelli, Max-Planck-Institut für Festkörperforschung (Germany)
Elisabeth Müller, ETH-Hönggerberg (Switzerland)
Oliver G. Schmidt, Max-Planck-Institut für Festkörperforschung (Germany)
Peter Michler, Univ. Stuttgart (Germany)

Published in SPIE Proceedings Vol. 6471:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
Marshall J. Cohen; Kong-Thon Tsen; Joseph P. Estrera; Jin-Joo Song, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?