Share Email Print
cover

Proceedings Paper

Heterogeneous integration of semiconducting and carbide nanowires on Si substrates
Author(s): Loucas Tsakalakos; Seth T. Taylor; Reed R. Corderman; Joleyn Balch; Jody Fronheiser
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Integration of nanowires onto foreign substrates, and in functional devices, is widely recognized as a significant hurdle to further development of nanosystems based on quasi-one dimensional nanostructures. We describe methods for directly integrating relevant nanostructures on technologically relevant Si substrates using vapor phase synthesis of the nanowires. It is shown that ZnO nanowires may be directly integrated onto Si substrates containing patterned metal lines. Preferential growth from the edge of the metal lines has been achieved. We also show that growth of refractory transition metal carbides is also possible using catalytic growth. The electrical properties of such systems are also discussed. Finally, methods of integrating nanowires vertically on a Si substrate are also described.

Paper Details

Date Published: 19 October 2006
PDF: 11 pages
Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 637019 (19 October 2006); doi: 10.1117/12.696056
Show Author Affiliations
Loucas Tsakalakos, General Electric Global Research Ctr. (United States)
Seth T. Taylor, General Electric Global Research Ctr. (United States)
Reed R. Corderman, General Electric Global Research Ctr. (United States)
Joleyn Balch, General Electric Global Research Ctr. (United States)
Jody Fronheiser, General Electric Global Research Ctr. (United States)


Published in SPIE Proceedings Vol. 6370:
Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics
Nibir K. Dhar; Achyut K. Dutta; M. Saif Islam, Editor(s)

© SPIE. Terms of Use
Back to Top