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Proceedings Paper

An expedited approach to evaluate the importance of different crystal growth parameters on laser damage performance in KDP and DKDP
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Paper Abstract

We investigate the laser-induced damage resistance at 355 nm in DKDP crystals grown with varying growth parameters, including temperature, speed of growth and impurity concentration. In order to perform this work, a DKDP crystal was grown over 34 days by the rapid-growth technique with varied growth conditions. By using the same crystal, we are able to isolate growth-related parameters affecting LID from raw material or other variations that are encountered when testing in different crystals. The objective is to find correlations of damage performance to growth conditions and reveal the key parameters for achieving DKDP material in which the number of damage initiating defects is minimized.

Paper Details

Date Published: 15 January 2007
PDF: 6 pages
Proc. SPIE 6403, Laser-Induced Damage in Optical Materials: 2006, 64031S (15 January 2007); doi: 10.1117/12.695473
Show Author Affiliations
R. A. Negres, Lawrence Livermore National Lab. (United States)
N. P. Zaitseva, Lawrence Livermore National Lab. (United States)
P. DeMange, Lawrence Livermore National Lab. (United States)
S. G. Demos, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 6403:
Laser-Induced Damage in Optical Materials: 2006
Gregory J. Exarhos; Arthur H. Guenther; Keith L. Lewis; Detlev Ristau; M. J. Soileau; Christopher J. Stolz, Editor(s)

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