Share Email Print

Proceedings Paper

Photoluminescence relaxation kinetics in vapor etched porous silicon
Author(s): V. Karavanskii; W. Gillin; A. Sapelkin; N. N. Melnik; T. N. Zavaritskaya
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

New porous silicon preparation technique has been suggested and realized with using vapor etching of silicon in iodine and HF contained vapors. It has been shown that vapor etching allows the preparation of luminescent porous layers on heavy doped (n++ and p++ type) silicon. Comparison of Raman and CW excitation PL measurements of vapor etched porous layer with typical anodized luminescent porous silicon indicated that they have in general similar structural and PL properties. Time resolved photoluminescence measurements reveal however that excitation recombination for iodine contained vapor etched samples is two times faster with higher photoluminescence efficiency, which can be interpreted as increasing of radiative recombination rate for luminescence centers in new nanocrystalline silicon.

Paper Details

Date Published: 10 June 2006
PDF: 7 pages
Proc. SPIE 6344, Advanced Laser Technologies 2005, 63441A (10 June 2006); doi: 10.1117/12.694292
Show Author Affiliations
V. Karavanskii, A.M Prokhorov General Physics Institute (Russia)
W. Gillin, Queen Mary, Univ. of London (United Kingdom)
A. Sapelkin, Queen Mary, Univ. of London (United Kingdom)
N. N. Melnik, Lebedev Physical Institute (Russia)
T. N. Zavaritskaya, Lebedev Physical Institute (Russia)

Published in SPIE Proceedings Vol. 6344:
Advanced Laser Technologies 2005
Ivan A. Shcherbakov; Kexin Xu; Qingyue Wang; Alexander V. Priezzhev; Vladimir I. Pustovoy, Editor(s)

© SPIE. Terms of Use
Back to Top