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Proceedings Paper

SWIR HgCdTe 256x256 focal plane array technology at BAE Systems
Author(s): A. Hairston; S. P. Tobin; M. Hutchins; J. Marciniec; J. Mullarkey; P. Norton; M. Gurnee; M. B. Reine
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Paper Abstract

This paper reports new performance data for SWIR HgCdTe 256x256 hybrid Focal Plane Arrays with cutoff wavelengths of 2.6-2.7 μm, operating at temperatures of 190 K to 220 K. The unit cell size is 30x30 μm2. Back-illuminated SWIR HgCdTe P-on-n photodiode arrays were fabricated from two-layer LPE films grown on CdZnTe substrates. Response uniformity is excellent, with σ/μ=3-4%, and response operabilities are better than 99.9%. At a temperature of 190 K and a background photon flux of 6.8x1011 ph/cm2-s, the median NEI is 1.1x109 ph/cm2-s, which is 1.4 times the BLIP NEI. NEI operabilities are better than 98.8%. Quantum efficiencies for large-area test diodes are 69% to 78%, close to the 79% upper limit imposed by reflection from the non-antireflection-coated CdZnTe substrate.

Paper Details

Date Published: 8 September 2006
PDF: 11 pages
Proc. SPIE 6295, Infrared Detectors and Focal Plane Arrays VIII, 62950I (8 September 2006); doi: 10.1117/12.693201
Show Author Affiliations
A. Hairston, BAE Systems (United States)
S. P. Tobin, BAE Systems (United States)
M. Hutchins, BAE Systems (United States)
J. Marciniec, BAE Systems (United States)
J. Mullarkey, BAE Systems (United States)
P. Norton, BAE Systems (United States)
M. Gurnee, BAE Systems (United States)
M. B. Reine, BAE Systems (United States)

Published in SPIE Proceedings Vol. 6295:
Infrared Detectors and Focal Plane Arrays VIII
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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