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Proceedings Paper

Multi-layer resist system for 45-nm-node and beyond: Part II
Author(s): Yukihiro Fujimura; Jumpei Morimoto; Asuka Manoshiro; Mochihiro Shimizu; Hideyoshi Takamizawa; Masahiro Hashimoto; Hiroshi Shiratori; Katsuhiko Horii; Yasunori Yokoya; Yasushi Ohkubo; Tomoyuki Enomoto; Takahiro Sakaguchi; Masaki Nagai
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Paper Abstract

The CD requirements for the 45nm-node will become tighter so as it will be difficult to achieve with 65nm node technologies. In this paper, a method to improve resolution by using DRECE (Dry-etching Resistance Enhancement bottom-Coating for Eb) will be described. After all, DRECE has five times as high dry-etch resistance than the EB resist, and this enables to accept higher anisotropic dry etching condition. By optimizing dry etching conditions, the CD iso-dense bias dropped to 1/3 and the CD shift was reduced to 1/2. Also, there was no negative effect to CD uniformity. From these results, we propose the use of DRECE for the 45nm-node technology.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 634936 (20 October 2006); doi: 10.1117/12.692896
Show Author Affiliations
Yukihiro Fujimura, Dai Nippon Printing Co., Ltd. (Japan)
Jumpei Morimoto, Dai Nippon Printing Co., Ltd. (Japan)
Asuka Manoshiro, Dai Nippon Printing Co., Ltd. (Japan)
Mochihiro Shimizu, Dai Nippon Printing Co., Ltd. (Japan)
Hideyoshi Takamizawa, Dai Nippon Printing Co., Ltd. (Japan)
Masahiro Hashimoto, HOYA Corp. (Japan)
Hiroshi Shiratori, HOYA Corp. (Japan)
Katsuhiko Horii, HOYA Corp. (Japan)
Yasunori Yokoya, HOYA Corp. (Japan)
Yasushi Ohkubo, HOYA Corp. (Japan)
Tomoyuki Enomoto, Nissan Chemical Industries (Japan)
Takahiro Sakaguchi, Nissan Chemical Industries (Japan)
Masaki Nagai, Nissan Chemical Industries (Japan)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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