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Proceedings Paper

Rigorous mask modeling beyond the Hopkins approach
Author(s): J. Schermer; P. Evanschitzky; A. Erdmann
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Paper Abstract

This paper demonstrates the implementation of an imaging algorithm that extends the Hopkins approach in order to cope with the demanding requirements of state of the art lithography. Rigorous mask simulation for oblique angles of incidence is integrated into our model of a lithographic projection system. In order to show the capabilites, Chromeless Phase Lithography (CPL) masks are studied with the new implementation. Immersion conditions are applied and a benchmark against the Hopkins approximation is carried out. An impact on aerial-image formation and on lithographic-process simulation is shown. The approach helps to consider off-axis illumination-effects in mask optimization.

Paper Details

Date Published: 21 June 2006
PDF: 9 pages
Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810A (21 June 2006); doi: 10.1117/12.692730
Show Author Affiliations
J. Schermer, Fraunhofer-Institute of Integrated Systems and Device Technology (Germany)
P. Evanschitzky, Fraunhofer-Institute of Integrated Systems and Device Technology (Germany)
A. Erdmann, Fraunhofer-Institute of Integrated Systems and Device Technology (Germany)


Published in SPIE Proceedings Vol. 6281:
22nd European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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