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Proceedings Paper

Amplification characteristics of nanocluster-Si sensitized Er-doped waveguide amplifier using top-pumped blue-green LED
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Paper Abstract

In this paper, we provide a detailed performance analysis of an nc-Si EDWA for the real application. Optical gain (small signal / saturation regime), noise figure and required pump density has been assessed in terms of the device structure. Results show a high feasibility of achieving 10dBm output power with 0dBm of input signal, using an array of commercially available high-power blue-green LEDs as the top pump. In numerical model section, we suggest simplified coupled rate equation and 2-D propagation equation constructed to investigate amplifier performance. In performance analysis section, firstly, we compared population inversion characteristics for Er with/without nc-Si condition to confirm the widening of high inversion region by introducing nc-Si sensitizer, which means less pump intensity requirement for same input signal power. In addition, to test the feasibility of the NC-EDWA for the metro-network applications, we simulated the amplifier performance for varying the width of amplifier region. With 50x7μm2 active core and bottom mirror, only 15.8 W/cm2 (8.8 W/cm2 for 100μm width) of pump intensity was sufficient to meet the target operating condition. We also compare the inversion distributions of NC-Si EDWA, for the 4 types of EDWA structures under investigation (straight without/with mirror, adiabatic without/with mirror). As another key performance factor, we also calculated noise figures for different NC-Si EDWA structures.

Paper Details

Date Published: 6 October 2006
PDF: 9 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63522R (6 October 2006); doi: 10.1117/12.691623
Show Author Affiliations
Hansuek Lee, Seoul National Univ. (South Korea)
Jung H. Shin, Korea Advanced Institute of Science and Technology (South Korea)
Namkyoo Park, Seoul National Univ. (South Korea)

Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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