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Proceedings Paper

1310-nm InGaAlAs short-cavity lasers for 10-Gbit/s low-power-consumption transceivers
Author(s): Kazunori Shinoda; Takeshi Kitatani; Masahiro Aoki; Masaru Mukaikubo; Kenji Uchida; Kazuhisa Uomi
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Paper Abstract

An InGaAlAs short-cavity DBR laser enabling 1.3-μm, uncooled, 10-Gbit/s operation at lower drive currents is demonstrated. This laser consists of a short InGaAlAs-MQW active region butt-jointed to an InGaAsP-DBR region. This structure provides moderate chip power, low threshold current, and a large relaxation oscillation frequency simultaneously, because it has an optimum cavity length in the range between 10 and 100 μm, at which both VCSELs and conventional edge-emitters cannot be formed because of their difficulty of manufacture. The fabricated 75-μm short-cavity laser demonstrated 100°C, 10-Gb/s operation at a record low drive current of 14 mAp-p. Furthermore, it achieved side-mode suppression ratio of more than 37 dB at a high yield of 95%, because of the naturally high single-mode stability of its short-cavity DBR structure.

Paper Details

Date Published: 5 October 2006
PDF: 8 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520B (5 October 2006); doi: 10.1117/12.691031
Show Author Affiliations
Kazunori Shinoda, Hitachi, Ltd. (Japan)
Takeshi Kitatani, Hitachi, Ltd. (Japan)
Masahiro Aoki, Hitachi, Ltd. (Japan)
Masaru Mukaikubo, Opnext Japan, Inc. (Japan)
Kenji Uchida, Opnext Japan, Inc. (Japan)
Kazuhisa Uomi, Opnext Japan, Inc. (Japan)

Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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