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Proceedings Paper

Direct wafer bonding technology employing vacuum-cavity pre-bonding
Author(s): Guohua Yang; Guorong He; Wanhua Zheng; Lianghui Chen
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Paper Abstract

A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300°C and InP/GaAs couple wafers under 350°C. Aligning accuracy of 0.5μm is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550°C.

Paper Details

Date Published: 6 October 2006
PDF: 8 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63523I (6 October 2006); doi: 10.1117/12.688864
Show Author Affiliations
Guohua Yang, Institute of Semiconductors (China)
Guorong He, Institute of Semiconductors (China)
Wanhua Zheng, Institute of Semiconductors (China)
Lianghui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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