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Proceedings Paper

Theoretical analysis of GaAs-based F-P cavity filter and its application in integrated photodetector
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Paper Abstract

A kind of GaAs-based F-P(Fabry-Perot) cavity filter was presented. Its structure and tunability were analysed theoretically. Numerical simulation shows transmitted centre wavelength of the filter is 1.55μm, FWHM is 1.8nm and 0.6nm with 17 and 23 pairs of DBR respectively, a red shift of 7.2nm with temperature change of 100K, transmissivity almost keeps unchanged during tuning, and tuning wavelength is linear to temperature change. Further, long-wavelength-absorbed integrated photodetectors based on this filter structure was fabricated. Experimental results show a tuning wavelenghth of 10.2nm with power change of 200mW applied to the device, FWHM of about 0.6nm, and 4% quantum efficiency fluctuation during tuning. Good agreement with the simulation has been achieved.

Paper Details

Date Published: 6 October 2006
PDF: 6 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 635231 (6 October 2006); doi: 10.1117/12.687924
Show Author Affiliations
Ang Miao, Beijing Univ. of Posts and Telecommunications (China)
Wenjuan Wang, Beijing Univ. of Posts and Telecommunications (China)
Yiqun Li, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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