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Proceedings Paper

Thermal analysis and design of high-power LED packages and systems
Author(s): Lan Kim; Moo Whan Shin
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Paper Abstract

Thermal transient measurements of high power GaN-based LEDs with multi-chip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multi-chip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multi-chip LEDs has been analogized.

Paper Details

Date Published: 12 September 2006
PDF: 9 pages
Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 63370U (12 September 2006); doi: 10.1117/12.687681
Show Author Affiliations
Lan Kim, Myong Ji Univ. (South Korea)
Moo Whan Shin, Myong Ji Univ. (South Korea)

Published in SPIE Proceedings Vol. 6337:
Sixth International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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