Requirements to meet the 45nm technology node place significant challenges on Mask makers. Resolution Enhancement Techniques (RET) employed to extend optical lithography in order to resolve sub-resolution features, have burdened mask processes margins. Also, Yield compromises loom with every nanometer of error incurred on the Mask and the Device platforms. RET techniques, such as Optical Proximity Correction (OPC), require the Mask Etcher to achieve exceptionally tight control of Critical Dimensions (CD). This ensures OPC feature integrity on the mask and resultant image fidelity of OPC structures, as well as, subsequently high and sustainable yields. This paper talks about 45 nm Chrome etch challenges and how Applied Materials next generation mask etcher provides solutions to these challenges.

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 634933 (20 October 2006);

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)