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Proceedings Paper

Rigorous FEM simulation of EUV masks: influence of shape and material parameters
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Paper Abstract

We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements. This work results from a collaboration between AMTC (mask fabrication), Physikalisch-Technische Bundesanstalt (scatterometry) and ZIB/JCMwave (numerical simulation).

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 63493D (20 October 2006); doi: 10.1117/12.686828
Show Author Affiliations
Jan Pomplun, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Sven Burger, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Frank Schmidt, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Lin Zschiedrich, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)
Christian Laubis, Physikalisch-Technische Bundesanstalt (Germany)
Uwe Dersch, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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