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Proceedings Paper

ZnCdSeTe radiation detectors
Author(s): Vello Valdna; Jaan Hiie; Marek Strandberg; Rainer Traksmaa; Mart Viljus
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Paper Abstract

Group II-VI narrow band gap compounds CdTe, ZnCdTe and CdSeTe are known as the most suitable semiconductor materials for the room temperature γ- and X-ray detectors. In this work, electronic properties of a quadrupole compound ZnCdSeTe were investigated. Chlorine, copper and oxygen doped host material was synthesized from the grinded mixture of 2 mol% ZnTe, 36 mol% CdTe, and 62 mol% CdSe, to keep a hexagonal structure of crystals. Precautions were applied to achieve an uniform doping, high quality of the crystal surfaces, and to remove residue phases after the thermal treatments. Fabricated polycrystalline samples showed a high performance from NIR via VIS and UV to X-ray band, with sharp donor-acceptor pair peak at 922 nm, and dynamic range above 104. High stability, good linearity and performance of samples was measured using X-ray source with Cu-anode, at 40 kV.

Paper Details

Date Published: 13 October 2006
PDF: 6 pages
Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636817 (13 October 2006); doi: 10.1117/12.686584
Show Author Affiliations
Vello Valdna, Tallinn Univ. of Technology (Estonia)
Jaan Hiie, Tallinn Univ. of Technology (Estonia)
Marek Strandberg, Tallinn Univ. of Technology (Estonia)
Rainer Traksmaa, Tallinn Univ. of Technology (Estonia)
Mart Viljus, Tallinn Univ. of Technology (Estonia)

Published in SPIE Proceedings Vol. 6368:
Optoelectronic Devices: Physics, Fabrication, and Application III
Joachim Piprek; Jian Jim Wang, Editor(s)

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