Proceedings Paper
Predicting the influence of trapped particles on EUVL reticle distortion during exposure chucking| Format | Member Price | Non-Member Price |
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Paper Abstract
Among the potential sources of image placement (IP) error for extreme ultraviolet lithography (EUVL) is the
deformation of the mask during electrostatic chucking. This paper focuses on the in-plane and out-of-plane distortion of
the EUVL reticle due to the entrapment of particles. Localized finite element (FE) models have been developed to
simulate the micro response of the reticle / particle / chuck system. To identify the macro response, global FE models
have been generated to simulate the system under typical chucking conditions. Parametric studies were performed to
illustrate the effect of particle size on the final IP accuracy.
Paper Details
Date Published: 20 October 2006
PDF: 12 pages
Proc. SPIE 6349, Photomask Technology 2006, 634938 (20 October 2006); doi: 10.1117/12.686145
Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)
PDF: 12 pages
Proc. SPIE 6349, Photomask Technology 2006, 634938 (20 October 2006); doi: 10.1117/12.686145
Show Author Affiliations
Vasu Ramaswamy, Univ. of Wisconsin, Madison (United States)
Kevin T. Turner, Univ. of Wisconsin, Madison (United States)
Kevin T. Turner, Univ. of Wisconsin, Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin, Madison (United States)
Edward G. Lovell, Univ. of Wisconsin, Madison (United States)
Edward G. Lovell, Univ. of Wisconsin, Madison (United States)
Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)
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