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Proceedings Paper

Predicting the influence of trapped particles on EUVL reticle distortion during exposure chucking
Author(s): Vasu Ramaswamy; Kevin T. Turner; Roxann L. Engelstad; Edward G. Lovell
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Paper Abstract

Among the potential sources of image placement (IP) error for extreme ultraviolet lithography (EUVL) is the deformation of the mask during electrostatic chucking. This paper focuses on the in-plane and out-of-plane distortion of the EUVL reticle due to the entrapment of particles. Localized finite element (FE) models have been developed to simulate the micro response of the reticle / particle / chuck system. To identify the macro response, global FE models have been generated to simulate the system under typical chucking conditions. Parametric studies were performed to illustrate the effect of particle size on the final IP accuracy.

Paper Details

Date Published: 20 October 2006
PDF: 12 pages
Proc. SPIE 6349, Photomask Technology 2006, 634938 (20 October 2006); doi: 10.1117/12.686145
Show Author Affiliations
Vasu Ramaswamy, Univ. of Wisconsin, Madison (United States)
Kevin T. Turner, Univ. of Wisconsin, Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin, Madison (United States)
Edward G. Lovell, Univ. of Wisconsin, Madison (United States)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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