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Proceedings Paper

Study of chromeless mask quartz defect detection capability for 80-nm post structure
Author(s): Jerry Lu; Boster Wang; Frank F. Chen; Orion Wang; Jomarch Chou; Orson Lin; Jackie Cheng; Ellison Chen; Paul Yu
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Paper Abstract

Chrome-less Phase Lithography (CPL) was introduced as a potential strong Resolution Enhancement Technology (RET) for 90nm to 65nm node critical layers. One of the important issue with trench type chrome-less mask manufacturing for post structure is quartz defect detection capability. This study will focus on half pitch 80nm (1X) design node and apply different trench sizes and programmed defect sizes. All test patterns will be inspected on KLA-Tencor TeraScan576 inspection tool with both standard Die-to-Die (DD) and TeraPhase DD inspection modes to determine defect detection capability. All programmed defects will also be simulated on the Zeiss AIMS Fab-193 to determine wafer CD error. Finally, we will establish the relationship between trench size, defect detection capability and printability, and summarize the chrome-less mask quartz defect detection capability for 80nm post structure application.

Paper Details

Date Published: 20 October 2006
PDF: 7 pages
Proc. SPIE 6349, Photomask Technology 2006, 63493K (20 October 2006); doi: 10.1117/12.685660
Show Author Affiliations
Jerry Lu, Toppan Chunghwa Electronics Corp. (Taiwan)
Boster Wang, Toppan Chunghwa Electronics Corp. (Taiwan)
Frank F. Chen, Toppan Chunghwa Electronics Corp. (Taiwan)
Orion Wang, Toppan Chunghwa Electronics Corp. (Taiwan)
Jomarch Chou, Toppan Chunghwa Electronics Corp. (Taiwan)
Orson Lin, Toppan Chunghwa Electronics Corp. (Taiwan)
Jackie Cheng, KLA-Tencor Corp. (Taiwan)
Ellison Chen, KLA-Tencor Corp. (Taiwan)
Paul Yu, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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