
Proceedings Paper
Influence of Al doping on the phase change kinetics of eutectic Sb70Te30 recording filmFormat | Member Price | Non-Member Price |
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Paper Abstract
The addition of Al increases the temperature and activation energy of crystallization of the fast-growth type Sb70Te30
recording film so that the archival stability will be improved. Meanwhile, the addition of Al increases the temperature
and activation energy of melting of the Sb70Te30 recording film so that the local melting of the crystalline Sb and Sb2Te3
phases will be suppressed. The pulsed laser powers required to trigger crystallization, melting, and ablation of Sb70Te30
recording film increase with increasing Al content indicating the increased stability of the non-crystalline phase, in the
meantime, the increased melting and ablation powers indicating the Al addition could increase the melting temperature
and prevent ablation effect of the Sb70Te30 recording film.
Paper Details
Date Published: 22 June 2006
PDF: 6 pages
Proc. SPIE 6282, Optical Data Storage 2006, 62821Z (22 June 2006); doi: 10.1117/12.685190
Published in SPIE Proceedings Vol. 6282:
Optical Data Storage 2006
Ryuichi Katayama; Tuviah E. Schlesinger, Editor(s)
PDF: 6 pages
Proc. SPIE 6282, Optical Data Storage 2006, 62821Z (22 June 2006); doi: 10.1117/12.685190
Show Author Affiliations
Yung-Sung Hsu, National Chung Hsing Univ. (Taiwan)
Yung-Chiun Her, National Chung Hsing Univ. (Taiwan)
Yung-Chiun Her, National Chung Hsing Univ. (Taiwan)
Shun-Te Cheng, Industrial Technology Research Institute (China)
Song-Yeu Tsai, Industrial Technology Research Institute (China)
Song-Yeu Tsai, Industrial Technology Research Institute (China)
Published in SPIE Proceedings Vol. 6282:
Optical Data Storage 2006
Ryuichi Katayama; Tuviah E. Schlesinger, Editor(s)
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