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Proceedings Paper

Fabrication of a monolithically integrated multiple wavelength Fabry-Perot filter array using transparent etch stop layers for accurate wavelength determination
Author(s): Diana Convey; Ngoc Le; Steven M. Smith; Paige Holm; Jeffrey Baker
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Paper Abstract

In this paper we describe a method of fabricating a Fabry-Perot filter array consisting of four distinct wavelengths using a stopping layer, which in turn is discriminately measured. Precise control of the oxide thickness is demonstrated by using reflectance to measure center wavelengths (CWL) between 645nm-822nm with full width half maximum (FWHM) values of 15 nm. These parameters are used to confirm good narrow band filter characteristics. The physical and chemical properties of an oxide layer converted from a silicon-carbon-nitride (SiCN) etch stop layer (ESL) is reported for both as-deposited and the resultant oxidized film. The filter array can be fabricated directly on top of silicon photo diodes, to form a complete multi-wavelength sensor system. Fabricating a multi-wavelength filter array using etch-stop layers can provide better thickness control and across wafer uniformity compared to a timed-etch approach.

Paper Details

Date Published: 25 October 2006
PDF: 7 pages
Proc. SPIE 6378, Chemical and Biological Sensors for Industrial and Environmental Monitoring II, 637815 (25 October 2006); doi: 10.1117/12.684937
Show Author Affiliations
Diana Convey, Motorola Labs. (United States)
Ngoc Le, Motorola Labs. (United States)
Steven M. Smith, Motorola Labs. (United States)
Paige Holm, Motorola Labs. (United States)
Jeffrey Baker, Motorola Labs. (United States)

Published in SPIE Proceedings Vol. 6378:
Chemical and Biological Sensors for Industrial and Environmental Monitoring II
Steven D. Christesen; Arthur J. Sedlacek III; James B. Gillespie; Kenneth J. Ewing, Editor(s)

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