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Proceedings Paper

Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences
Author(s): F. F. Komarov; O. I. Velichko; A. M. Mironov; V. A. Tsurko; G. M. Zayats
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Paper Abstract

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and a new description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid thermal annealing gives a reasonable agreement with the experimental data.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601U (10 June 2006); doi: 10.1117/12.683564
Show Author Affiliations
F. F. Komarov, Institute of Applied Physics Problems (Belarus)
O. I. Velichko, Belarusian State Univ. on Informatics and Radioelectronics (Belarus)
A. M. Mironov, Institute of Applied Physics Problems (Belarus)
V. A. Tsurko, Institute of Mathematics (Belarus)
G. M. Zayats, Institute of Mathematics (Belarus)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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