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Proceedings Paper

Complex simulation of electron process of deep submicron MOSFET based on energy balance equation
Author(s): Victor V. Gergel; Marat N. Yakupov
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Paper Abstract

A new physico-mathematical model of the accelerated calculation of characteristics of deep sub-micron (≃100 nm) MOSFETs, which are being studied and used in modern microelectronics, is suggested. This model combines the advanced quasi-hydrodynamic description of high-field electron drift which is taken into account for thermo-diffusion component of the electron flow and used among the continuity equation so-called energy balance equation. The last controls the distribution of electron temperature flow, thereby determines the behavior of spatial changes of effective mobility in transistor's channels. Unique speed of software implementation of the model in a great measure is due to using special approximations in description of spatial-doped parameters of device stuctures, but allows the adequate account for spreading of source-drain regions, peculiarities of LDD engineering, halo implant effects in the substrate at the near channel with source and drain, gate poly-depletion effects and so on.

Paper Details

Date Published: 10 June 2006
PDF: 10 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601O (10 June 2006); doi: 10.1117/12.683546
Show Author Affiliations
Victor V. Gergel, Institute for Radio-Engineering and Electronics (Russia)
Marat N. Yakupov, JSC Mikron (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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