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Proceedings Paper

Investigations of bipolar magnetotransistor
Author(s): R. D. Tikhonov
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Paper Abstract

(BMT) with well. Investigation by the modem two-dimensional TCAD of the volume SRH-recombination are studied of the lateral bipolar magnetotransistor with the diffusion well for the physicists of working and high sensitivity designs. Magnetic field effect create volume concentration-recombination mechanism of the current negative sensitivity. For raising sensitivity is conduct study of series lateral bipolar magnetotransistor with base in well. Joining the contacts of base and well creates a threshold of operating, negative magnetosensitivity, growing of sensitivity in weak magnetic field. Transistor can serve the generator electron-hole plasma. Device has volumetric generation-recombination mechanism of sensitivity, new principle of getting maximum relative sensitivity on the current 2000 1/T in the magnetic field of the Earth.

Paper Details

Date Published: 10 June 2006
PDF: 12 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601G (10 June 2006); doi: 10.1117/12.683491
Show Author Affiliations
R. D. Tikhonov, SMC Technological Ctr. MSIEE (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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