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Proceedings Paper

Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation
Author(s): Vladimir Borzdov; Fadei Komarov; Oleg Zhevnyak; Vadim Galenchik; Dmitry Pozdnyakov; Andrei Borzdov
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Paper Abstract

The Monte Carlo model of the impact ionization in deep submicron MOSFETs is worked out. This model allows the influence of the secondary charge carrier current on the drain current to be evaluated. The developed model is built on the basis of the reduction scheme. Moreover, the model takes into account all the major features of electron transport in deep submicron MOSFETs, the dominant scattering mechanisms, the quantization of electron spectrum as well as the modeling of constructive parameters and basic drain breakdown mechanisms.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601E (10 June 2006); doi: 10.1117/12.683488
Show Author Affiliations
Vladimir Borzdov, Belarus State Univ. (Belarus)
Fadei Komarov, Belarus State Univ. (Belarus)
Oleg Zhevnyak, Belarus State Univ. (Belarus)
Vadim Galenchik, Belarus State Univ. (Belarus)
Dmitry Pozdnyakov, Belarus State Univ. (Belarus)
Andrei Borzdov, Belarus State Univ. (Belarus)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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