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Proceedings Paper

Photoluminescence of 2D electronic epsilon-layers in lateral non-homogeneous nano-structures based on GaAs
Author(s): Yu. V. Khabarov; V. V. Kapaev; V. A. Petrov; G. B. Galiev
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Paper Abstract

Within the framework of previously proposed the spectral-correlative method investigation of the semiconductor structures with laterally nonuniform layers the photoluminescence (PL) of the structure on basis GaAs with n-type d-layers at 77 K is investigated. This method has allowed to study on one sample the dependence of the features of observed multicomponent spectrum PL from a variation of two parameters - distances between d-layers and composition of the narrow quantum well InGaAs taking place between them. The obtained results allow to link observed exponential increase of the intensity PL from the area of the d-layers at change these parameters with change of a ratio of the lateral located in minima of the fluctuation potential and free two-dimensional holes. The effect of the stabilization of the energetic position of PL spectral lines which we associate to the localization of the holes in a potential well between d-layers was found out. The received experimental results coordinated with the numerical calculations carried out in our work.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626018 (10 June 2006); doi: 10.1117/12.683405
Show Author Affiliations
Yu. V. Khabarov, Institute of UHF Semiconductor Electronics (Russia)
V. V. Kapaev, P.N. Lebedev Physical Institute (Russia)
V. A. Petrov, Institute of Radioengineering and Electronics (Russia)
G. B. Galiev, Institute of UHF Semiconductor Electronics (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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