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Proceedings Paper

Ge nanoclusters in GeO2: formation and optical properties
Author(s): E. B. Gorokhov; V. A. Volodin; D. V. Marin; M. D. Efremov; A. G. Cherkov; A. K. Gutakovskii; V. A. Shvets; A. G. Borisov
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Paper Abstract

Germanium nanocrystals in GeO2 films have been obtained with the use of two methods and have been studied. The first method of Ge nanocrystal formation is a film deposition from supersaturated GeO vapor with subsequent dissociation of metastable GeO on heterophase system Ge:GeO2. The second method is growth of anomalous thick native germanium oxide layers with chemical composition GeOx(H2O) during catalytically enhanced Ge oxidation, x is close to 1. The obtained films were studied with the use of photoluminescence, Raman scattering spectroscopy, high-resolution electron microscopy. Strong photoluminescence signals were detected in GeO2 films with Ge nanocrystals at room temperature. "Blue-shift" of the photoluminescence maximum was observed with reducing of Ge nanocrystal size in anomalous thick native germanium oxide films. So, the correlation between reducing of the Ge nanocrystal sizes (estimated from position of Raman peaks) and photoluminescence "blue-shift" was observed. The Ge nanocrystals presence was confirmed by high-resolution electron microscopy data. The optical gap in Ge nanocrystals was calculated with taking into account quantum size effects and compared with the position of the experimental photoluminescence peaks. It can be concluded that a Ge nanocrystal in GeO2 matrix is a quantum dot of type I. It was shown, that "band gap engineering" approaches can lead to creation of Ge:GeO2 heterostructures with required properties. This heterostructures can be perspective for using in opto-electronics, for creation of elements of quasi-nonvolatile MOS memory using Ge nanocrystals as traps for electrons or holes, etc.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626010 (10 June 2006); doi: 10.1117/12.683295
Show Author Affiliations
E. B. Gorokhov, Institute of Semiconductor Physics (Russia)
V. A. Volodin, Institute of Semiconductor Physics (Russia)
D. V. Marin, Institute of Semiconductor Physics (Russia)
M. D. Efremov, Institute of Semiconductor Physics (Russia)
A. G. Cherkov, Institute of Semiconductor Physics (Russia)
A. K. Gutakovskii, Institute of Semiconductor Physics (Russia)
V. A. Shvets, Institute of Semiconductor Physics (Russia)
A. G. Borisov, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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