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Proceedings Paper

Using N-type organic material with photoconductivity for low-reflectance OLEDs
Author(s): Kai-Hsiang Chuang; Yu-Hsuan Ho; Jiun-Haw Lee; Chun-Chieh Chao; Man-Kit Leung; Cheng-Yu Li; Hsuen-Li Chen
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Paper Abstract

In this paper, we have demonstrated a low-reflectance organic light-emitting device (OLED) by inserting a perylene diimide derivative between the emitting layer (EML) and the cathode. Such a material exhibits a good electron transport capability and good photoconductivity which absorbs light. A semi-transparent layer composed of thin aluminum (Al) and silver (Ag) was used between the EML and the n-type organic material, a perylene diimide derivative, for better electron injection and efficient destructive interference. The J-V characteristics of our low reflection and the control one are nearly identical which shows the superior conductivity of this material. In addition, the absorption peak of this ntype organic material is near 550 nm which can eliminate most of the ambient visible light. And the potocurrent is generated from self-absorption by this material. Thus, this device can also be applied as a photodetector or the applications of the self-adjustable display under different ambient illumination with suitable driving scheme.

Paper Details

Date Published: 5 December 2006
PDF: 8 pages
Proc. SPIE 6333, Organic Light Emitting Materials and Devices X, 63331Q (5 December 2006);
Show Author Affiliations
Kai-Hsiang Chuang, National Taiwan Univ. (Taiwan)
Yu-Hsuan Ho, National Taiwan Univ. (Taiwan)
Jiun-Haw Lee, National Taiwan Univ. (Taiwan)
Chun-Chieh Chao, National Taiwan Univ. (Taiwan)
Man-Kit Leung, National Taiwan Univ. (Taiwan)
Cheng-Yu Li, National Taiwan Univ. (Taiwan)
Hsuen-Li Chen, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6333:
Organic Light Emitting Materials and Devices X
Zakya H. Kafafi; Franky So, Editor(s)

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