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Proceedings Paper

Modeling and characterization of GaN p-i-n photodiodes
Author(s): Jie Deng; Subrata Halder; James C. M. Hwang; Brian Hertog; Junqing Xie; Amir Dabiran; Andrei Osinsky
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Paper Abstract

This paper reports temperature-dependent DC and small-signal RF characteristics of a 0.4-mm-radius sapphire-based GaN p-i-n diode between -60°C and 175°C. Deep levels approximately 1 eV below the conduction band were observed in both persistent photo-conductance and photo-capacitance measurements. Self-heating effects were also observed and modeled with the measured thermal resistance and time constant. Based on these characteristics, an equivalent-circuit model was constructed, which accurately predicted the temperature-dependent DC and RF characteristics of the diode.

Paper Details

Date Published: 7 September 2006
PDF: 8 pages
Proc. SPIE 6294, Infrared and Photoelectronic Imagers and Detector Devices II, 62940N (7 September 2006); doi: 10.1117/12.682087
Show Author Affiliations
Jie Deng, Lehigh Univ. (United States)
Subrata Halder, Lehigh Univ. (United States)
James C. M. Hwang, Lehigh Univ. (United States)
Brian Hertog, SVT Associates, Inc. (United States)
Junqing Xie, SVT Associates, Inc. (United States)
Amir Dabiran, SVT Associates, Inc. (United States)
Andrei Osinsky, SVT Associates, Inc. (United States)

Published in SPIE Proceedings Vol. 6294:
Infrared and Photoelectronic Imagers and Detector Devices II
Randolph E. Longshore; Ashok Sood, Editor(s)

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