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Proceedings Paper

Solar water splitting with a composite silicon/metal oxide semiconductor electrode
Author(s): Yoshihiro Nakato; Naoaki Kato; Akihito Imanishi; Takashi Sugiura; Shunsuke Ogawa; Norimitsu Yoshida; Shuichi Nonomura
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Paper Abstract

We have studied solar water splitting with a composite semiconductor electrode, composed of an n-i-p junction amorphous silicon (a-Si, Eg≈ 1.7 eV) layer, an indium tin oxide (ITO) layer, and a tungsten trioxide (WO3, Eg 2.8 eV) particulate layer. The n-i-p a-Si layer, which had more accurately a structure of n-type microcrystalline ( c) 3C-SiC:H (25 nm)/i-type a-Si:H (400 nm)/p-type a-SiCx:H (25 nm), was prepared on a TiO2-covered F-doped SnO2 (FTO)/glass plate by a Hot-Wire CVD method. The ITO layer (100 nm thick) was deposited on the p-type a-Si by the DC magnetron sputtering method, and the WO3 particulate layer was formed by a doctor-blade method, using a colloidal solution of commercial WO3 powder of 10-30 nm in diameter. The composite electrode thus prepared was finally heat-treated at 300°C for 1 h. The anodic (water oxidation) photocurrent for the composite electrode in 0.1 M Na2SO4 yielded an IPCE (incident photon to current efficiency) of about 6 % at 400 nm and was stable for more than 24 h. Besides, the onset potential lay a little (by about 0.05 V) more negative than the equilibrium hydrogen evolution potential, indicating a possibility of solar water splitting with no external bias. A preliminary result for the water photooxidation with an "n- GaP/p-Si/Pt dot" electrode is also reported briefly.

Paper Details

Date Published: 8 September 2006
PDF: 6 pages
Proc. SPIE 6340, Solar Hydrogen and Nanotechnology, 63400U (8 September 2006); doi: 10.1117/12.681980
Show Author Affiliations
Yoshihiro Nakato, Kwansei Gakuin Univ. (Japan)
Japan Science and Technology Agency (Japan)
Naoaki Kato, Osaka Univ. (Japan)
Akihito Imanishi, Osaka Univ. (Japan)
Japan Science and Technology Agency (Japan)
Takashi Sugiura, Gifu Univ. (Japan)
Japan Science and Technology Agency (Japan)
Shunsuke Ogawa, Gifu Univ. (Japan)
Norimitsu Yoshida, Gifu Univ. (Japan)
Japan Science and Technology Agency (Japan)
Shuichi Nonomura, Gifu Univ. (Japan)
Japan Science and Technology Agency (Japan)

Published in SPIE Proceedings Vol. 6340:
Solar Hydrogen and Nanotechnology
Lionel Vayssieres, Editor(s)

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