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Proceedings Paper

Fabrication of nanoimprint stamp and its application
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Paper Abstract

Nanoimprint technology is placed on the ITRS 04 for the 32nm and 22nm technology node (half pitch of metal 1 layer for DRAM) competing technologies, which can also reach the throughput requirements of SEMI: EUV, DUV, X-ray and Electron projection lithography. Nanoimprint technology can be used for mainstream IC, nanoelectronics, polymer electronics, optics (wave guides, switches, lenses), data storage, biochemistry, life science (DNA), μTAS and microfluidics. However, the technology key of nanoimprint is stamp fabrication. In this paper, high resolution electron beam resist ZEP520 is used for the fabrication of 32 and 22nm nanoimprint stamp, PDMS material for nanoimprint is evaluated and the applications of nanoimprint technology using PDMS stamp for semiconductor, optoelectronics and biotechnology are presented.

Paper Details

Date Published: 20 May 2006
PDF: 7 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62833H (20 May 2006); doi: 10.1117/12.681836
Show Author Affiliations
Yung-Chiang Ting, Far East College (Taiwan)
Shyi-Long Shy, National Nano Device Labs. (Taiwan)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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