Share Email Print

Proceedings Paper

Calibration of quantum detector of noise based on a system of asymmetric superconducting loops
Author(s): V. L. Gurtovoi; S. V. Dubonos; A. V. Nikulov; N. N. Osipov; V. A. Tulin
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The quantum oscillations V(Φ/Φ0) of the dc voltage are induced on segments of asymmetric superconducting loops by an external ac current or noise. The dependencies of the amplitude of V(Φ/Φ0) on amplitude of inducing ac current are measured at different temperatures below superconducting transition Tc on aluminum asymmetric loops and systems of the loops connected in series. The measured values of the maximum amplitude of the quantum oscillations V(Φ/Φ0), the amplitude of the ac current inducing this maximum dc voltage and the critical amplitude of the ac current decrease with temperature increase to Tc. The extrapolation of these measured dependencies to the region near superconducting transition allows to make a calibration of asymmetric superconducting loops as quantum detector of noise. The calibration restores an amplitude profile of the noise pulses from a measured temperature dependence of an amplitude of the quantum oscillations V(Φ/Φ0) induced by this noise. It is found that rectification efficiency, determined as relation of the maximum amplitude of the quantum oscillations V(Φ/Φ0) to the ac current amplitude inducing it, decreases near superconducting transition Tc. High efficiency of rectification observed below Tc is consequence of irreversibility of the current-voltage curves. Increase of the rectification efficiency is achieved in multiple series connected loop structures.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600T (10 June 2006); doi: 10.1117/12.681803
Show Author Affiliations
V. L. Gurtovoi, Institute of Microelectronics Technology (Russia)
S. V. Dubonos, Institute of Microelectronics Technology (Russia)
A. V. Nikulov, Institute of Microelectronics Technology (Russia)
N. N. Osipov, Institute of Microelectronics Technology (Russia)
V. A. Tulin, Institute of Microelectronics Technology (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?