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Proceedings Paper

Advanced hybrid mask process development
Author(s): Orson Lin; Jomarch Chou; K. K. Fu; Booky Lee; Richard Lu; Jerry Lu; Chiang-Lin Shi
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Paper Abstract

CPL technology is one of the powerful methods for Resolution Enhancement Technology. With high NA and strong off-axis illumination CPL has a very high resolution and is capable of printing complex 2D patterns. Image using off-axis illumination with an attenuated phase shift mask can also improve process latitude. We can combine two technologies in one mask with same off-axis illumination condition to have more flexible application. Normally CPL technology is applied in binary mask and Qz is etched for 180 degree phase. To fulfill this hybrid mask we can apply Qz etch in current normal attenuate PSM blank and E-Beam 2nd writing is also can be applied for the zebra structure. To form the different application in different area we use 5 times writing in this hybrid mask process. Also the Qz etching process is very important because the Qz etching is strongly related to the Cr-Mosi-Qz three layer profile. So a L9 DOE has been applied for Qz etching parameter fine tuning. We will optimize the phase uniformity, phase linearity, profile, CD linearity and CD proximity through the DOE.

Paper Details

Date Published: 20 May 2006
PDF: 6 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831S (20 May 2006); doi: 10.1117/12.681754
Show Author Affiliations
Orson Lin, Toppan Chunghwa Electronics Corp. (Taiwan)
Jomarch Chou, Toppan Chunghwa Electronics Corp. (Taiwan)
K. K. Fu, Nanya Technology Corp. (Taiwan)
Booky Lee, Toppan Chunghwa Electronics Corp. (Taiwan)
Richard Lu, Nanya Technology Corp. (Taiwan)
Jerry Lu, Toppan Chunghwa Electronics Corp. (Taiwan)
Chiang-Lin Shi, Nanya Technology Corp. (Taiwan)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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