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Proceedings Paper

Theoretical description and experiment to prove the bistability of the semiconductor laser diode
Author(s): Vítězslav Jeřábek; Ivan Hüttel
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Paper Abstract

We report about theoretical results and experiments, which led to the demonstration of optical bistability on the specially modified laser diode (LD) created on the double heterostructure Ga1-xAlxAl/GaAs with saturable absorption section. To prove the bistability, the time method for bistability impulse verification (BIV) by bistable laser diode (BLD) was proposed. With the use of the BIV method, basic parameters of the hysterisis loop of the W-A characteristic samples of realized BLD were determined. Also the mathematic model of the W-A characteristic was derived, used for the simulation of the characteristic for the realized BLD. Element values of the electrical equivalent circuit of the BLD for small changes of signal were calculated for selected operating points of the simulated W-A characteristics. The dependency of bistability on the temperature is monitored by measuring the BLD W-A characteristic.

Paper Details

Date Published: 28 August 2006
PDF: 11 pages
Proc. SPIE 6286, Advances in Thin-Film Coatings for Optical Applications III, 62860L (28 August 2006); doi: 10.1117/12.680764
Show Author Affiliations
Vítězslav Jeřábek, Czech Technical Univ. (Czech Republic)
Ivan Hüttel, Institute of Chemical Technology (Czech Republic)

Published in SPIE Proceedings Vol. 6286:
Advances in Thin-Film Coatings for Optical Applications III
Michael J. Ellison, Editor(s)

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