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Proceedings Paper

TOF mobility measurements in pristine films of P3HT: control of hole injection and influence of film thickness
Author(s): Amy M. Ballantyne; Joanne S. Wilson; Jenny Nelson; Donal D. C. Bradley; James R. Durrant; Martin Heeney; Warren Duffy; Iain McCulloch
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Paper Abstract

Time-of-flight (TOF) photocurrent measurements have been used to study charge transport in films of regioregular poly(3-hexylthiophene) (P3HT). Devices in which the P3HT film had been deposited directly onto an indium tin oxide (ITO) electrode produced high dark currents as a result of hole injection into P3HT from ITO. Photocurrent transients in such devices were disperse. It was found however, that these dark currents could be significantly reduced by inserting a dense TiO2 layer between the ITO and the polymer film. The resulting devices gave non-dispersive transients with hole and electron mobilities in the range of 1 - 2 10-4 cm2 V-1 s-1 at room temperature. The mobility values were observed to be almost independent of film thickness over the range of 350 nm to 4.3 μm. Temperature dependence studies showed a weak dependence on temperature with a low energetic disorder parameter according to analysis using the Gaussian Disorder Model (GDM) of 71 meV.

Paper Details

Date Published: 3 November 2006
PDF: 11 pages
Proc. SPIE 6334, Organic Photovoltaics VII, 633408 (3 November 2006); doi: 10.1117/12.680655
Show Author Affiliations
Amy M. Ballantyne, Imperial College London (United Kingdom)
Joanne S. Wilson, Imperial College London (United Kingdom)
Jenny Nelson, Imperial College London (United Kingdom)
Donal D. C. Bradley, Imperial College London (United Kingdom)
James R. Durrant, Imperial College London (United Kingdom)
Martin Heeney, Merck Chemicals Ltd. (United Kingdom)
Warren Duffy, Merck Chemicals Ltd. (United Kingdom)
Iain McCulloch, Merck Chemicals Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 6334:
Organic Photovoltaics VII
Zakya H. Kafafi; Paul A. Lane, Editor(s)

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