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Proceedings Paper

Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
Author(s): Z. C. Feng; J. Chen; H. Tsai; J. Yang; P. Li; C. Wetzel; T. Detchprohm; J. Nelson; I. T. Ferguson
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Paper Abstract

InGaN/GaN multiple quantum well (MQW) light emitting diode (LED) structures with blue and green light emissions have been grown on sapphire substrates by metalorganic chemical vapor deposition. They are investigated by high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), photoluminescence (PL) and photoluminescence excitation (PLE). HR-XRD showed multiple satellite peaks up to 10th order due to the quantum well superlattice confinement effects. HR-TEM determined the MQW structures and parameters, indicating the high quality of layer interfaces of these LED samples. Excitation power-dependent PL predicates that both piezoelectric field-induced quantum-confined Stark effect and band filling effect influence the luminescent properties. Temperature-dependent PL shows that the QW PL emission peak exhibits a monotonic red-shift and that the full width at half maximum of the PL band shows a W-shaped temperature-dependent behavior with increasing temperature. From the PLE results, a large energy difference, so-called quantum confined Stokes shift, between the band-edge absorption and emission was observed. Penetrating TEM revealed the V-shape defects, and quantum dot-like structures within the InGaN well region, which leads to intense light emissions from these MQW LEDs.

Paper Details

Date Published: 12 September 2006
PDF: 10 pages
Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 63370D (12 September 2006); doi: 10.1117/12.677653
Show Author Affiliations
Z. C. Feng, National Taiwan Univ. (Taiwan)
J. Chen, National Taiwan Univ. (Taiwan)
H. Tsai, National Taiwan Univ. (Taiwan)
J. Yang, National Taiwan Univ. (Taiwan)
P. Li, Uniroyal Optoelectronics (United States)
C. Wetzel, Uniroyal Optoelectronics (United States)
T. Detchprohm, Uniroyal Optoelectronics (United States)
J. Nelson, Uniroyal Optoelectronics (United States)
I. T. Ferguson, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 6337:
Sixth International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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