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Proceedings Paper

Surface scattering in SOI field-effect transistor
Author(s): S. D. Ananiev; V. V. V'yurkov; V. F. Lukichev
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Paper Abstract

The influence of surface roughness scattering on channel conductivity of ultrathin body MOSFET in a quantum mechanical approach is considered. Analyzing a counterplay between Coulomb and surface scattering we show that a transition from dominating Coulomb scattering towards dominating surface scattering occurs when the film thickness is reduced to few nanometers. Evidently, the "critical" film thickness depends upon roughness characteristics and surface charged defects density. We have also examined the ripple-wise roughness which gives rise 4th power law of dependence of mobility on film thickness. In spite of a smaller power compared to that for smooth roughness the ripple-wise roughness could dominate just on Si/Si02 interface due to high discrepancy in lattice constants of contacting materials.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600O (10 June 2006); doi: 10.1117/12.677221
Show Author Affiliations
S. D. Ananiev, Institute of Physics and Technology (Russia)
V. V. V'yurkov, Institute of Physics and Technology (Russia)
V. F. Lukichev, Institute of Physics and Technology (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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