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Proceedings Paper

Degradation of thin copper conductors because of low temperature melting
Author(s): D. G. Gromov; S. A. Gavrilov; E. N. Redichev; A. I. Mochalov; R. M. Ammosov
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Paper Abstract

It is shown that copper thin film conductors (10-100 nm thickness) have not the defined temperature of melting. The melting of 20 nm copper thin film starts at 610 °C after 5 mm and, at the same time, at 470 °C after 3 h 40 mm. The melting of 100 nm copper thin film starts at 740 °C after 7 mm and at 640 °C after 2 h 25 mm. The kinetics of this phenomenon has been studied. The stages of process have been shown. The activation energies of thin film melting have been estimated. It is demonstrated that the activation energy of process is decreased with the copper film thickness reduction. The character of activation energy changes has been explained with point of view of the hydrodynamics.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600H (10 June 2006); doi: 10.1117/12.677086
Show Author Affiliations
D. G. Gromov, Moscow Institute of Electronic Technics (Russia)
S. A. Gavrilov, Moscow Institute of Electronic Technics (Russia)
E. N. Redichev, Moscow Institute of Electronic Technics (Russia)
A. I. Mochalov, Moscow Institute of Electronic Technics (Russia)
R. M. Ammosov, State Research Institute of Physical Problems (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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