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Proceedings Paper

Diffusion and phase formation in ternary silicate systems framed by an ion bombardment
Author(s): Sergey A. Krivelevich; Eduard Yu. Buchin; Yuri I. Denisenko; Roman V. Selyukov
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Paper Abstract

New technology of obtaining of SOT-structures by ionic synthesis of buried silica glass layers has been proposed. This technology is based on physical processes of formation of a new phase that appears in ion-synthesized Si-B-O and Si-P-0 systems at heat treatment. It has been shown that synthesized layers can be formed at significantly moderated annealing conditions than in the case of SIMOX-process. The structures have been studied by secondary ion-mass spectrometry (SIMS), Auger-electron spectroscopy and X-ray photoelectron spectroscopy (XPS). The study of electrical characteristics of the structures with buried silica glass layers includes the current-voltage and capacity-voltage measurements.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626007 (10 June 2006); doi: 10.1117/12.677013
Show Author Affiliations
Sergey A. Krivelevich, Institute of Microelectronics and Informatics (Russia)
Eduard Yu. Buchin, Institute of Microelectronics and Informatics (Russia)
Yuri I. Denisenko, Institute of Microelectronics and Informatics (Russia)
Roman V. Selyukov, Institute of Microelectronics and Informatics (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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