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Proceedings Paper

Theoretical study of phase stability of InxGa1-xN alloys
Author(s): Won Ha Moon; Jong Pa Hong; Soo Min Lee; Dong Woohn Kim
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Paper Abstract

Molecular-mechanics based simulations are applied to investigate the structures and phase stability of InGaN alloys. The variation of bond lengths and angles with increasing In composition is found. This causes the considerable structural change and the phase separation of InGaN alloys. The interaction parameter (Ω= -1.3435x + 6.1607 (kcal/mol) ) dependent on In composition is also calculated. The phase diagram for InGaN alloys shows an asymmetry with respect to x0.5. The critical temperature for the phase separation is 1392 K at x = 0.44. These results are in agreement with experimental results.

Paper Details

Date Published: 18 April 2006
PDF: 5 pages
Proc. SPIE 6180, Photonics, Devices, and Systems III, 61800U (18 April 2006); doi: 10.1117/12.675674
Show Author Affiliations
Won Ha Moon, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Jong Pa Hong, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Soo Min Lee, Samsung Electro-Mechanics Co., Ltd. (South Korea)
Dong Woohn Kim, Samsung Electro-Mechanics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 6180:
Photonics, Devices, and Systems III
Pavel Tománek; Miroslav Hrabovský; Miroslav Miler; Dagmar Senderákova, Editor(s)

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