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Proceedings Paper

Numerical simulation of dynamics of phase transitions induced in CdTe by nanosecond laser irradiation
Author(s): A. A. Kovalev; S. P. Zhvavyi; G. L. Zykov
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Paper Abstract

The results of numerical simulation of nanosecond radiation ruby laser influence on cadmium telluride have shown that evaporation process essentially affects the dynamics of phase transitions in the near-surface region of cadmium telluride. Intensive evaporation results in the material surface cooling forming a nonmonotone temperature profile with maximum temperature in semiconductor volume at the distance of ~ 20 nm from the surface. The melt formed under the surface at energy radiation density exceeding the threshold value extends to the surface and to the volume of semiconductor as well. As a result of evaporation and diffusion of cadmium telluride components in the melt the near-surface region is enriched with tellurium. While modeling, the dependence of crystallization temperature and phase transition latent heat upon the components concentration in the melt was used, which allowed us to receive a satisfactory agreement with the experimental data concerning melt duration dependence upon energy density.

Paper Details

Date Published: 26 April 2006
PDF: 7 pages
Proc. SPIE 6161, International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies, 61610D (26 April 2006); doi: 10.1117/12.675031
Show Author Affiliations
A. A. Kovalev, Institute of Electronics (Belarus)
S. P. Zhvavyi, Institute of Electronics (Belarus)
G. L. Zykov, Institute of Electronics (Belarus)

Published in SPIE Proceedings Vol. 6161:
International Conference on Lasers, Applications, and Technologies 2005: Laser-Assisted Micro- and Nanotechnologies
Vitaly I. Konov; Vladislav Ya. Panchenko; Koji Sugioka; Vadim P. Veiko, Editor(s)

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