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Proceedings Paper

The promise of quantum-dot infrared photodetectors
Author(s): E. Towe; D. Pal
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Paper Abstract

Engineered semiconductor quantum structures that enforce carrier confinement in all three spatial dimensions have recently become of interest for potential applications in the sensing of infrared radiation via intersub-level transitions. These structures, most often called quantum dots, may offer a viable alternative to the mercury cadmium telluride semiconductor and GaAs/(Al,Ga)As quantum-well structures for infrared detection. Their major advantages for detection include (i) operation under normal-incidence illumination, (ii) a predicted high responsivity due to a long electron lifetime in the excited states, and (iii) a potential for high-temperature operation. This paper will review the current-state-of-development of (In,Ga)As/GaAs quantum-dot infrared detectors that are sensitive to light in the middle wavelength infrared (3-5 μm) region of the electromagnetic spectrum. The paper will also discuss some of the leading edge experimental results that suggest that quantum-dot active regions may offer a route to elevated device operating temperatures (> 150 K).

Paper Details

Date Published: 17 May 2006
PDF: 13 pages
Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060K (17 May 2006); doi: 10.1117/12.673824
Show Author Affiliations
E. Towe, Carnegie Mellon Univ. (United States)
D. Pal, Carnegie Mellon Univ. (United States)

Published in SPIE Proceedings Vol. 6206:
Infrared Technology and Applications XXXII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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