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Proceedings Paper

Modeling of linewidth measurement in SEMs using advanced Monte Carlo software
Author(s): S. Babin; S. Borisov; A. Ivanchikov; I. Ruzavin
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Paper Abstract

Accurate measurement of linewidth is a critical problem in sub-100 nm semiconductor manufacturing, where required accuracy is in the range of 1 nm and below. CD-SEMs are usually used for such measurements. A cross-correlation of CD-SEMs, while demonstrating a good relative trend, is often subject to a significant absolute linewidth error, as well as the parameters of the SEM settings being used. There is no proven algorithm for edge detection in CD-SEMs. Tool manufacturers set up the edge detection voluntarily, as a rule, which is why the absolute errors in measurement occur. In this paper, we demonstrate that edge detection depends greatly on parameters of SEM settings, like beam diameter, and pattern properties, like the wall angle of a pattern. When both the signal and pattern are known, an offset for a specific SEM algorithm can be found. An algorithm for automatic edge detection in CDSEMs can be tuned for beam parameters and the type of pattern. A SEM signal was simulated using the advanced Monte Carlo software CHARIOT, which is commercially available. Input data for the modeling was 3D microstructures and e-beam parameters. A simulated signal was then compared to a known pattern. Such a comparison allowed us to define the edge position and calibrate a SEM so that any system- and pattern-dependent errors could be removed.

Paper Details

Date Published: 25 March 2006
PDF: 7 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61524P (25 March 2006); doi: 10.1117/12.673532
Show Author Affiliations
S. Babin, Abeam Technologies (United States)
S. Borisov, Abeam Technologies (United States)
A. Ivanchikov, Abeam Technologies (United States)
I. Ruzavin, Abeam Technologies (United States)

Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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