The present generation of uncooled infrared photon detectors relies on complex heterostructures grown by low temperature epitaxial techniques. We report recent results on MOCVD grown Hg_1-xCd_xTe photodetectors and their applications. Special modifications to the interdiffused multilayer process (IMP) has been applied for the in-situ control of stoichiometry, improved morphology and minimized consumption of precursors. As a result we are able to grow fully-doped multiple layer heterostructures without any post-growth thermal anneal. The heterostructures have been used for fabrication of IR photodetectors optimized for any wavelength within the 1 to 15 μm range and operating at temperatures 200-300 K. Variable bandgap absorbers have been used for detectors with tuned spectral response and multicolor devices. The uncooled photodetectors have been applied in sub-ppb gas analyzers, laser warning devices, free space optical communications, Fourier Transform IR Spectroscopy, and many other IR systems.

Date Published: 17 May 2006
PDF: 12 pages
Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060T (17 May 2006); doi: 10.1117/12.671727

Published in SPIE Proceedings Vol. 6206:
Infrared Technology and Applications XXXII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)