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Proceedings Paper

1 mm APDs in InGaAs with InAlAs and InP multiplication layers: performance characteristics
Author(s): Paul McDonald; Joseph Boisvert; Takahiro Isshiki; Ping Yuan; Rengarajan Sudharsanan
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Paper Abstract

Large-area APDs operating in the wavelength region of 1- 1.5 micron are useful for many low light level applications. Present commercially available InGaAs based APDs are small, (<500 micron diameter size) and thus limit the field of view. We report here on low dark current density, large-area (1 mm diameter) InGaAs APDs. InGaAs APD device structures with InP and InAlAs multiplication layers were grown by metaloragnic vapor deposition method. The combination of good quality material and a proprietary passivation process yielded 1 mm APD devices with low dark current density and high gain. Devices exhibited gain as high as 30 and dark current density as low as 0.5 microamperes per square centimeter.

Paper Details

Date Published: 17 May 2006
PDF: 7 pages
Proc. SPIE 6206, Infrared Technology and Applications XXXII, 620606 (17 May 2006); doi: 10.1117/12.666052
Show Author Affiliations
Paul McDonald, Spectrolab Inc. (United States)
Joseph Boisvert, Spectrolab Inc. (United States)
Takahiro Isshiki, Spectrolab Inc. (United States)
Ping Yuan, Spectrolab Inc. (United States)
Rengarajan Sudharsanan, Spectrolab Inc. (United States)

Published in SPIE Proceedings Vol. 6206:
Infrared Technology and Applications XXXII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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