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Proceedings Paper

Room-temperature AlGaAsSb/InGaAsSb heterojunction phototransistors
Author(s): K. Swaminathan; O. V. Sulima; T. F. Refaat; T. Dillon; E. Marchena; N. N. Faleev; M. N. Abedin; U. N. Singh; D. Prather
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Paper Abstract

We present room-temperature AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) with a cutoff wavelength (50% of maximum quantum efficiency) of 2.4 μm and 2.15 μm. AlGaAsSb/InGaAsSb HPT structures were grown by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). This work is a continuation of a preceding project, which was carried out using liquid phase epitaxy (LPE) grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters, MBE and MOCVD - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. HPT with different diameter of photosensitive area (75, 200, 300 and 1000 μm) were fabricated and characterized. In particular, I-V characteristics, spectral response and noise, as well as detectivity and noise-equivalent-power were determined in a broad range of temperatures and bias voltages. Advantages of HPT integration with diffractive optical elements (DOE) were demonstrated.

Paper Details

Date Published: 18 May 2006
PDF: 9 pages
Proc. SPIE 6232, Intelligent Integrated Microsystems, 62320P (18 May 2006); doi: 10.1117/12.664971
Show Author Affiliations
K. Swaminathan, Univ. of Delaware (United States)
O. V. Sulima, Univ. of Delaware (United States)
T. F. Refaat, Old Dominion Univ. (United States)
T. Dillon, Univ. of Delaware (United States)
E. Marchena, Univ. of Delaware (United States)
N. N. Faleev, Univ. of Delaware (United States)
M. N. Abedin, NASA Langley Research Ctr. (United States)
U. N. Singh, NASA Langley Research Ctr. (United States)
D. Prather, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 6232:
Intelligent Integrated Microsystems
Ravindra A. Athale; John C. Zolper, Editor(s)

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