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Proceedings Paper

Single-frequency high-power continuous-wave oscillation at 1003 nm of an optically pumped semiconductor laser
Author(s): M. Jacquemet; M. Domenech; J. Dion; M. Strassner; G. Lucas-Leclin; P. Georges; I. Sagnes; A. Garnache
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Paper Abstract

This work reports single-frequency laser oscillation at λ = 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (λ = 501.5 nm) with an output power around 60 mW.

Paper Details

Date Published: 17 April 2006
PDF: 11 pages
Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61841X (17 April 2006); doi: 10.1117/12.662931
Show Author Affiliations
M. Jacquemet, Lab. Charles Fabry de l'Insitut d'Optique (France)
M. Domenech, Lab. Charles Fabry de l'Insitut d'Optique (France)
J. Dion, Lab. de Photonique et de Nanostructures, CNRS (France)
M. Strassner, Lab. de Photonique et de Nanostructures, CNRS (France)
G. Lucas-Leclin, Lab. Charles Fabry de l'Insitut d'Optique (France)
P. Georges, Lab. Charles Fabry de l'Insitut d'Optique (France)
I. Sagnes, Lab. de Photonique et de Nanostructures, CNRS (France)
A. Garnache, Univ. Montpellier II (France)


Published in SPIE Proceedings Vol. 6184:
Semiconductor Lasers and Laser Dynamics II
Daan Lenstra; Markus Pessa; Ian H. White, Editor(s)

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