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Proceedings Paper

Interferometric and confocal techniques for testing of silicon wafers
Author(s): J. Galas; D. Litwin; S. Sitarek; B. Surma; B. Piatkowski; A. Miros
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Paper Abstract

The paper provides new insights into Silicon wafer measurements in context of technological problems of developing a sophisticated measurement technique, which harnesses helium atom beam as a probe. Nano-resolution imaging techniques such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) are well-know in surface science. A scanning helium atom microscope, where a focused beam of low energy, neutral helium atoms is used as an imaging probe is a new concept creating non-destructive and non-invasive surface investigation tool in science and industry. This paper is focused on measurements of flatness and thickness of the wafer, which is used as a deflecting mirror of the helium beam. Two -optics based- measurement techniques are presented: scanning confocal system and the Fizeau interferometer. The latter is applied as a quick reference device placed close to the production line whereas the former offers high accuracy flatness and thickness maps of the wafers.

Paper Details

Date Published: 27 April 2006
PDF: 8 pages
Proc. SPIE 6188, Optical Micro- and Nanometrology in Microsystems Technology, 61880C (27 April 2006); doi: 10.1117/12.662234
Show Author Affiliations
J. Galas, Institute of Applied Optics (Poland)
D. Litwin, Institute of Applied Optics (Poland)
S. Sitarek, Institute of Applied Optics (Poland)
B. Surma, Institute of Electronics Materials Technology (Poland)
B. Piatkowski, Institute of Electronics Materials Technology (Poland)
A. Miros, Institute of Electronics Materials Technology (Poland)

Published in SPIE Proceedings Vol. 6188:
Optical Micro- and Nanometrology in Microsystems Technology
Christophe Gorecki; Anand K. Asundi; Wolfgang Osten, Editor(s)

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