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Proceedings Paper

Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers
Author(s): Bernd Witzigmann; Valerio Laino; Mathieu Luisier; Friedhard Roemer; Georg Feicht; Ulrich T. Schwarz
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Paper Abstract

In this contribution, microscopic simulation of optical gain in GaN-based short-wavelength lasers is presented. The model is used to perform a design study of different active regions, and to discuss the impact of inhomogeneous broadening, carrier-induced screening of the piezo charges, and well thickness on material gain and laser threshold current. As a reference, the model parameters are calibrated with temperature dependent Hakki-Paoli measurements of spectral gain. Excellent agreement between measurement and simulation is achieved, which gives the design studies a quantitative character.

Paper Details

Date Published: 14 April 2006
PDF: 8 pages
Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840E (14 April 2006); doi: 10.1117/12.662048
Show Author Affiliations
Bernd Witzigmann, ETH Zurich (Switzerland)
Valerio Laino, ETH Zurich (Switzerland)
Mathieu Luisier, ETH Zurich (Switzerland)
Friedhard Roemer, ETH Zurich (Switzerland)
Georg Feicht, Univ. of Regensburg (Germany)
Ulrich T. Schwarz, Univ. of Regensburg (Germany)

Published in SPIE Proceedings Vol. 6184:
Semiconductor Lasers and Laser Dynamics II
Daan Lenstra; Markus Pessa; Ian H. White, Editor(s)

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