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Proceedings Paper

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics
Author(s): U. T. Schwarz; C. Lauterbach; M. O. Schillgalies; C. Rumbolz; M. Furitsch; A. Lell; V. Härle
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Paper Abstract

We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 μm narrow and a 10 μm wide ridge waveguide laser diode.

Paper Details

Date Published: 14 April 2006
PDF: 9 pages
Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840K (14 April 2006); doi: 10.1117/12.662019
Show Author Affiliations
U. T. Schwarz, Univ. Regensburg (Germany)
C. Lauterbach, Univ. Regensburg (Germany)
M. O. Schillgalies, OSRAM Opto Semiconductors GmbH (Germany)
C. Rumbolz, OSRAM Opto Semiconductors GmbH (Germany)
M. Furitsch, OSRAM Opto Semiconductors GmbH (Germany)
A. Lell, OSRAM Opto Semiconductors GmbH (Germany)
V. Härle, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 6184:
Semiconductor Lasers and Laser Dynamics II
Daan Lenstra; Markus Pessa; Ian H. White, Editor(s)

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