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Proceedings Paper

Free-standing Si/SiO2 superlattices: fabrication procedure and optical, structural, and light-emitting properties
Author(s): S. Novikov; J. Sinkkonen; L. Khriachtchev; M. Räsänen; A. Sitnikova
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Paper Abstract

The Si/SiO2 superlattices were prepared by a molecular beam deposition method, high temperature furnace annealing (1100 °C), and back-side Si wafer etching in tetramethyl ammonium solution. Transmission electron microscopy and Raman spectroscopy show that the layered structure is not preserved during high temperature treatment. The etching of the substrate increases photoluminescence of the Si/SiO2 material. Optical waveguiding was realized for the free-standing sample demonstrating its reasonable optical quality and providing the optical parameters.

Paper Details

Date Published: 20 April 2006
PDF: 9 pages
Proc. SPIE 6195, Nanophotonics, 619512 (20 April 2006); doi: 10.1117/12.661849
Show Author Affiliations
S. Novikov, Helsinki Univ. of Technology (Finland)
J. Sinkkonen, Helsinki Univ. of Technology (Finland)
L. Khriachtchev, Univ. of Helsinki (Finland)
M. Räsänen, Univ. of Helsinki (Finland)
A. Sitnikova, A.F. Ioffe Institute (Russia)

Published in SPIE Proceedings Vol. 6195:
David L. Andrews; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)

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