Share Email Print

Proceedings Paper

Surface-state charge fluctuations on the carrier dynamics in InGaN/GaN blue light-emitting diodes with multiquantum barriers
Author(s): Po-Chun Lin; Chih-Chun Shen; Jen-Cheng Wang; Ray-Ming Lin; Tzer-En Nee
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this article, we investigate the anomalous temperature characteristics of InGaN/GaN multiple quantum-well (MQW) blue light emitting diodes (LEDs), with multiquantum barriers (MQBs) and GaN barriers, in depth via an examination of the luminescence intensity and carrier transport temperature evolution. The experimental evidences for electrical properties of two diodes exhibited the ideality factor extremely departure from unity, and the anomalies were characterized by pseudo-temperature To and carrier tunneling behavior. With respect to conventional GaN barrier devices, devices with MQBs inherently exhibit a small pseudo-temperature To with a small characteristic energy and charge population of the multilayer interface, over a variety of temperature and voltage ranges. Due to the less interface state distribution and the more effective density of state (DOS), the excitons formed in the MQB sample augment the spectral radiations at the temperature higher than 180 K. Furthermore, the carrier tunneling processes via the extent of the charge population consequently cause anomaly more To and further characteristic energy, result in the abnormal deterioration of the EL intensities with small DOS for these two LEDs below 180 K. These results also demonstrate that an introduction of well-designed barriers within a heterojunction configuration can be used to perform device improvements by governing the coupling of dynamical transports to spontaneous emissions. All observed correlations suggest that the carrier transport process is essentially responsible for the improvement of the luminescence characteristic. Accordingly, the MQW with the well-designed MQB structures not only exhibited the thermal-insensitive luminescence, but also inhibited the energetic carrier overflow.

Paper Details

Date Published: 14 April 2006
PDF: 6 pages
Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61841L (14 April 2006); doi: 10.1117/12.661116
Show Author Affiliations
Po-Chun Lin, Chang Gung Univ. (Taiwan)
Chih-Chun Shen, Chang Gung Univ. (Taiwan)
Jen-Cheng Wang, Chang Gung Univ. (Taiwan)
Ray-Ming Lin, Chang Gung Univ. (Taiwan)
Tzer-En Nee, Chang Gung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6184:
Semiconductor Lasers and Laser Dynamics II
Daan Lenstra; Markus Pessa; Ian H. White, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?